Optoelectronic properties of InAlN/GaN distributed bragg reflector heterostructure examined by valence electron energy loss spectroscopy

A. Eljarrat, S. Estradé, F. Peiró, Z. Gacevic, S. Fernández-Garrido, E. Calleja, C. Magén. Optoelectronic properties of InAlN/GaN distributed bragg reflector heterostructure examined by valence electron energy loss spectroscopy. Accepted in Microscopy and Microanalysis. 2012, Vol. , p. -2012.