Formation of strained interfaces in AlSb/InAs multilayers grown by molecular beam epitaxy for quantum cascade lasers.

Formation of strained interfaces in AlSb/InAs multilayers grown by molecular beam epitaxy for quantum cascade lasers. J. Nicolaï, B. Warot-Fonrose, C. Gatel, R. Teissier, A. N. Baranov, C. Magen and A. Ponchet. Journal of Applied Physics 118, 035305 (2015).