Optoelectronic Properties of InAlN/GaN Distributed Bragg Reflector Heterostructure Examined by Valence Electron Energy Loss Spectroscopy

A. Eljarrat, S. Estradé, Ž. Gačević, S. Fernández-Garrido, E. Calleja, C. Magén, and F. Peiró. Optoelectronic Properties of InAlN/GaN Distributed Bragg Reflector Heterostructure Examined by Valence Electron Energy Loss Spectroscopy. Microscopy and Microanalysis. 2012, Vol. 18, p. 1143-2012.